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WebSiGeはSi格子 の一部をGeで置き換えたもので,Ge濃度を15%程度にす ると,バンドギャップが約0.1eV狭くなる。 これにより,エネ ルギーバリアを拡大できるため,ベース領域からエミッタ 領域へのホールの注入を抑制でき,NBを大きくしてもhFEが 低下せず,ベース領域を狭くできる。 また,高速化(fTの向上)にはベース領域のSiにGeを注入 し … WebFeb 15, 2024 · The discovery of two-dimensional (2D) compounds with excellent optoelectronic properties have attracted much scientific attention. Based on first … WebArticle “CdInGaS 4 : An unexplored two- dimensional materials with desirable band gap for optoelectronic devices” Detailed information of the J-GLOBAL is a service based on the concept of Linking, Expanding, and Sparking, linking science and technology information which hitherto stood alone to support the generation of ideas. By linking the information … eyelid lift new york